Oxidation of Ge implanted into SiO2 layers: Modeling and XPS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 115-119

  Borodin, V A ^a,c   Heinig, K H ^a   Schmidt, B ^a   Oswald, S ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b IFW DRESDEN   (Germany)

^c KURCHATOV INSTITUTE   (Russian Federation)

Author keywords

Germanium; Modeling; Oxidation; Silicon dioxide; X ray photoelectron spectroscopy

Indexed keywords

ANNEALING; ION IMPLANTATION; OXIDATION; PRECIPITATION (CHEMICAL); SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

COLLISIONAL MIXING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035334054     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)00507-9     Document Type: Conference Paper

References (12)