Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films

Thin Solid Films

Volumn 279, Issue 1-2, 1996, Pages 145-154

  Boukezzata, M ^a   Bielle Daspet, D ^b   Sarrabayrouse, G ^b   Mansour, F ^a  

^a Universite Mentouri Constantine   (Algeria)

^b LAAS CNRS   (France)

Author keywords

Boron; Chemical vapour deposition; Ion implantation; Oxidation; Silicon

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; ION IMPLANTATION; OXIDATION; POLYCRYSTALLINE MATERIALS; REACTION KINETICS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THIN FILMS;

IN SITU DOPED FILMS; OXIDE DIFFUSION COEFFICIENT; POLYCRYSTALLINE SILICON THIN FILMS; THERMAL OXIDATION;

SEMICONDUCTING SILICON;

EID: 0030171393     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)08172-0     Document Type: Article

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