Relaxation processes of AlGaN/GaN heterostructures grown onto single crystal GaN(0001) substrates

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 285-290

  Christiansen, S H ^a   Albrecht, M ^a   Strunk, H P ^a   Foxon, C T ^b   Korakakis, D ^b   Grzegory, I ^c   Porowski, S ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; FINITE ELEMENT METHOD; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN DISTRIBUTION;

HETEROJUNCTIONS;

EID: 0033221327     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<285::AID-PSSA285>3.0.CO;2-A     Document Type: Article

References (18)

1. S. STRITE and H. MORKOC, J. Vac. Sci. Technol. B 10, 1237, 1266 (1992).
2. F. BECHSTEDT, P. KÄCKELL, A. ZYWIETZ, K. KARCH, B. ADOLPH, K. TENELSEN, and J. FURTHMÜLLER, phys. stat. sol. (b) 202, 35 (1997).
3. S. CHRISTIANSEN, The Interaction Square in Heteroepitaxial Growth: Strain-Topology-Defects-Composition, in: Mikrostrukturelle Materialforschung, Vol. 4, Ed. H.P. STRUNK, Lehrstuhl für Mikrocharakterisierung, Erlangen 1997.
4. S. POROWSKI, MRS Internet J. Nitride Semicond. Res. 4S1, G1.3 (1999).
5. C.T. FOXON, T.S. CHENG, D. KORAKAKIS, S.V. NOVIKOV, R.P. CAMPION, I. GRZEGORY, S. POROWSKI, M. ALBRECHT, and H.P. STRUNK, MRS Internet J. Nitride Semicond. Res. 4S1, G4.11 (1999).
6. L. VESCAN, W. JÄGER, C. DIEKER, K. SCHMIDT, A. HARTMANN, and H. LÜTH, Mater. Res. Soc. Symp. Proc. 263, 23 (1992).
7. S. CHRISTIANSEN, M. ALBRECHT, and H.P. STRUNK, Comp. Mater. Sci. 7, 213 (1996).
8. Q. XIE, A. MADHUKAR, P. CHEN, and N.P. KOBAYASHI, Phys. Rev. Lett. 75, 2542 (1995).
9. K. TSUBOUCHI, IEEE Ultrasonics Symp. 634 (1985). R.B. SCHWARZ, Appl. Phys. Lett. 70. 1122 (1997).
10. K. TSUBOUCHI, IEEE Ultrasonics Symp. 634 (1985). R.B. SCHWARZ, Appl. Phys. Lett. 70. 1122 (1997).
11. S. CHRISTIANSEN, M. ALBRECHT, J. MICHLER, and H.P. STRUNK, phys. stat. sol. (a) 156, 129 (1996). S. CHRISTIANSEN, M. ALBRECHT, P.O. HANSSON, E. BAUSER, and H.P. STRUNK, Appl. Phys. Lett. 66, 574 (1995).
12. S. CHRISTIANSEN, M. ALBRECHT, J. MICHLER, and H.P. STRUNK, phys. stat. sol. (a) 156, 129 (1996). S. CHRISTIANSEN, M. ALBRECHT, P.O. HANSSON, E. BAUSER, and H.P. STRUNK, Appl. Phys. Lett. 66, 574 (1995).
13. D.J. SROLOVITZ, Acta Metall. 37, 621 (1989). R.J. ASARO and W.A. TILLER, Metall. Trans. 3, 1789 (1972). M. GRINFELD, Soviet Phys. - Doklady 31, 831 (1986).
14. D.J. SROLOVITZ, Acta Metall. 37, 621 (1989). R.J. ASARO and W.A. TILLER, Metall. Trans. 3, 1789 (1972). M. GRINFELD, Soviet Phys. - Doklady 31, 831 (1986).
15. D.J. SROLOVITZ, Acta Metall. 37, 621 (1989). R.J. ASARO and W.A. TILLER, Metall. Trans. 3, 1789 (1972). M. GRINFELD, Soviet Phys. - Doklady 31, 831 (1986).
16. M. ALBRECHT, S. CHRISTIANSEN, J. MICHLER, W. DORSCH, P.O. HANSSON, E. BAUSER, and H.P. STRUNK, Appl. Phys. Lett. 67, 1232 (1995).
17. A.G. CULLIS, A.J. PIDDUCK, and M.T. EMENY, Phys. Rev. Lett. 75, 2368 (1995).
18. H.P. STRUNK, S. CHRISTIANSEN, and M. ALBRECHT, Mater. Res. Soc. Symp. Proc. 399, 313 (1996).