Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 598-604

  Sugahara, Tomoya ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Band tail states; Dislocation; Heteroepitaxy; Homoepitaxy; Nonradiative recombination center; Phase separation

Indexed keywords

CARRIER CONCENTRATION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE SEPARATION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BAND TAIL STATES; GALLIUM NITRIDE; HETEROEPITAXY; HOMOEPITAXY; INDIUM GALLIUM NITRIDE; NONRADIATIVE RECOMBINATION CENTER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033690953     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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