Delta-doped AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with high breakdown voltages

Applied Physics Letters

Volumn 81, Issue 24, 2002, Pages 4649-4651

  Fan, Z Y ^a   Li, J ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; LEAKAGE CURRENTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

DRAIN CURRENT;

FIELD EFFECT TRANSISTORS;

EID: 0037049676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527984     Document Type: Article

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