Current-injection characterization of breakdown in AlGaN/GaN MODFETs

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 2000, Pages 84-92

  Alekseev, Egor ^a   Nguyen Tan, Philippe ^a   Pavlidis, Dimitris ^a   Micovic, Miroslav ^b   Wong, Danny ^b   Nguyen, Chanh ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; THERMIONIC EMISSION;

CURRENT-INJECTION CHARACTERIZATION; DRAIN-SOURCE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0034594127     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. MAX and >100V gate-drain breakdown voltage", Electronics Letters, Vol.33, n.4, 1997, p 334-335
2. M.Micovic, N.X.Nguyen, P.Janke, W.-S.Wong, P.Hashimoto, L.-M.McCray and C.Nguyen, "GaN/AlGaN high electron mobility transistors with f t of 110GHz", Electronics Letters, Vol. 36, n.4, February 2000
3. N.X.Nguyen et al., "Device characteristics of scaled GaN/AlGaN MODFETs", Electronics Letters, Vol.34, n.8, April 1998
4. E.Alekseev et al., "Large-Signal Characteristics of AlGaN/GaN Power MODFETs", 1999 MTT-S International Microwave Symposium Digest, vol.2 pp.533-536, June 1999
5. S.R.Bahl and J.A.del Alamo, "A new drain-current injection technique for the measurement of off-state breakdown voltage in FET's," IEEE Trans. Electron Devices, vol. 40, p. 1558, Aug. 1993
6. M.H.Sommerville, "Off-state breakdown in power pHEMTs: The impact of the source", IEEE Transactions on Electron Devices, Vol.45, no.9, pp1883-1889, September 1998