Raman spectroscopy for characterization of hard, wide-bandgap semiconductors: Diamond, GaN, GaA1N, A1N, BN

Annual Review of Materials Science

Volumn 26, Issue 1, 1996, Pages 551-579

  Bergman, Leah ^a   Nemanich, Robert J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Diamond films; Raman lineshape; Stress; Temperature

Indexed keywords

ALUMINUM ALLOYS; CUBIC BORON NITRIDE; DIAMOND FILMS; MICROSTRUCTURE; PHONONS; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; STRESSES; TEMPERATURE;

ALUMINUM NITRIDE; MIXED ALLOYS; PHONON PLASMON INTERACTION; RAMAN ACTIVE MODES; RAMAN LINESHAPE;

SEMICONDUCTOR MATERIALS;

EID: 0029712611     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.ms.26.080196.003003     Document Type: Article

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