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Volumn 54, Issue 1-3, 1998, Pages 160-163

Interfacial reactions of Ni on Si0.76Ge0.24 and Si by pulsed laser annealing

Author keywords

Interfacial reactions; Laser annealing

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FILM GROWTH; NICKEL; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

EID: 0032121388     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(98)00024-8     Document Type: Article
Times cited : (11)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.