Epitaxial growth of NiSi2 on (111 )Si inside 0.1-0.6 μm oxide openings prepared by electron beam lithography

Applied Physics Letters

Volumn 69, Issue 7, 1996, Pages 999-1001

  Yew, J Y ^a   Chen, L J ^a   Nakamura, K ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; STRESSES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT HOLES; LATERAL CONFINEMENT SHAPE; LATERAL CONFINEMENT SIZE; NICKEL SILICIDE; OXIDE OPENINGS; RAPID THERMAL ANNEALING;

NICKEL ALLOYS;

EID: 0030214332     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117108     Document Type: Article

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