Effect of vacuum annealing on the properties of transparent conductive AZO thin films prepared by DC magnetron sputtering

Physica Status Solidi (A) Applied Research

Volumn 193, Issue 1, 2002, Pages 139-152

  Fang, G J ^a,b   Li, D J ^a   Yao, B L ^a  

^a TSINGHUA UNIVERSITY   (China)

^b HUBEI UNIVERSITY OF ARTS AND SCIENCE   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; GLASS; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PRESSURE EFFECTS; THERMAL EFFECTS; THIN FILMS; VACUUM APPLICATIONS;

CRYSTAL SIZE DISTRIBUTION; DC MAGNETRON SPUTTERING; GLASS SHEET SUBSTRATES; NANOCRYSTALLINE STRUCTURE; OXYGEN VACANCIES; ROOM TEMPERATURE; TRANSPARENT CONDUCTIVE ALUMINUM ZINC OXIDE THIN FILMS; VACUUM ANNEALING; VACUUM PRESSURE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036749645     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200209)193:1<139::AID-PSSA139>3.0.CO;2-D     Document Type: Article

References (27)

1. T. Minami, MRS Bull. 25, 38 (2000).
2. K. Ellmer, J. Phys. D 34, 3097 (2001).
3. K. T. Ramakrishna Reddy and R. W. Miles, J. Mater. Sci. Lett. 17, 279 (1998).
4. Y. Nakanishi, A. Miyake, and H. Kominami, Appl. Surf. Sci. 142, 233 (1999).
5. J. Ma, Thin Solid Films 357, 98 (1999).
6. K. Haga, M. Kamidaira, Y. Kashiwada, T. Sekiguchi, and H. Watanabe, J. Cryst. Growth 214, 77 (2000).
7. D. C. Fujita, S. Fujita, and S. Park, phys. stat. sol. (a) 176, 579 (1999).
8. A. E. Jimenez-Gonzalez, J. A. Soto Urueta, and R. Suarez-Parra, J. Cryst. Growth 192, 430 (1998).
9. W. Tang and D. C. Cameron, Thin Solid Films 238, 83 (1994).
10. O. Vigil, F. Cruz, G. Santana, L. Vaillant, A. Morales-Acevedo, and G. Contreras-Puente, Appl. Surf. Sci. 161, 27 (2000).
11. P. Nunues, A. Malik, B. Fernandes, E. Fortunato, E. Vilarinhip, and R. Martins, Vacuum 52, 45 (1999).
12. P. Nunes, E. Fortunato, and R. Martins, Thin Solid Films 383, 277 (2001).
13. B. J. Jin, H. S. Woo, S. Im, S. H. Bae, and S. Y. Lee, Appl. Surf. Sci. 169/170, 521 (2001).
14. X. Q. Meng, W. Zhen, J. P. Guo, and X. J. Fan, Appl. Phys. A, Mater. Sci. Process. 70, 421 (2000).
15. T. Minemoto, T. Negami, S. Nishiwaki, H. Takakura, and Y. Hamakawa, Thin Solid Films 372, 173 (2000).
16. T. Minami, H. Sonohara, T. Kakumu, and S. Takata, Jpn. J. Appl. Phys. 34, L971 (1995).
17. T. Minami, T. Yamamoto, and T. Miyata, Thin Solid Films 366, 63, (2000).
18. K. Tominaga, M. Kataoka, H. Manabe, T. Ueda, and I. Mori, Thin Solid Films 290/291, 84 (1996).
19. A. Rose, and G. J. Exarhos, Thin Solid Films 308/309, 42 (1997).
20. T. Takashi, Appl. Surf. Sci. 157, 47 (2000).
21. D. J. Li, J. Vac. Sci. Technol. A 20, 33 (2002).
22. J. P. Han, P. Q. Mantas, and A. M. R. Senos, J. Eur. Ceram. Soc. 2, 1883 (2001).
23. G. J. Fang, Z. L. Liu, G. C. Sun, and K. L. Yao, phys. stat. sol. (a) 184, 129 (2001).
24. T. Minami, S. Suzuki, and T. Miyata, Thin Solid Films 398/399, 53 (2001).
25. M. Chen, Z. L. Pei, C. Sun, J. Gong, R. F. Huang, and L. S. Wen, Mater. Sci. Eng. B 85, 212 (2001).
26. W. J. Jeong and G. C. Park, Sol. Energy Mater. Sol. Cells 65, 37 (2001).
27. G. H. Lee, Y. Yamamoto, M. Kourogi, and M. Ohtsu, Thin Solid Films 386, 117 (2001).