ZnO thin films prepared by remote plasma-enhanced CVD method

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 77-80

  Haga, K ^a   Kamidaira, M ^a   Kashiwaba, Y ^a   Sekiguchi, T ^b   Watanabe, H ^a  

^a SENDAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; FILM PREPARATION; MORPHOLOGY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; PLASMA DISCHARGE; PLASMA EXCITATION;

ZINC OXIDE;

EID: 0033688035     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00068-3     Document Type: Article

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