Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 521-524

  Jin, B J ^a   Woo, H S ^a   Im, S ^a   Bae, S H ^a   Lee, S Y ^a  

^a Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; FILM GROWTH; FILM PREPARATION; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY; THIN FILMS; ULTRAVIOLET RADIATION; ZINC OXIDE;

ULTRAVIOLET PHOTOLUMINESCENCE; ZINC OXIDE THIN FILMS;

SEMICONDUCTING FILMS;

EID: 17344380939     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00751-0     Document Type: Article

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