Effect of A1 and Mn doping on the electrical conductivity of ZnO

Journal of the European Ceramic Society

Volumn 21, Issue 10-11, 2001, Pages 1883-1886

  Han, Jiaping ^a   Mantas, P Q ^a   Senos, A M R ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Electrical conductivity; Impurities; Sintering; ZnO

Indexed keywords

ALUMINUM; MANGANESE; SINTERING; ZINC OXIDE;

DOPING LEVEL;

ELECTRIC CONDUCTIVITY;

CERAMICS;

EID: 0034883663     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(01)00136-4     Document Type: Article

References (14)

1. Varistor ceramics
2. The barrier height formation in ZnO varistor
3. High temperature characterisation of electrical barriers in ZnO varistors
4. Grain boundary induced perturbation in electrical ceramics
5. Improved varistor nonlinearity via donor impurity doping
6. 3 doping
7. Metal oxide varistor action- A homojunction breakdown mechanism
8. Electrical properties of grain boundaries in polycrystalline compound semiconductors
9. Electrical activity at individual grain boundaries and interfaces in semiconducting oxides
10. Densification and grain growth of Al-doped ZnO
11. Nonisothermal sintering of Mn-doped ZnO
12. Grain growth in Mn-doped ZnO
13. Band-gap narrowing in heavily defect-doped ZnO