Growth of polycrystalline GaN on silicon (001) substrates by RF plasma chemical vapor deposition with ZnO buffer layer

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 579-582

  Park, D C ^a   Fujita, Sz ^a   Fujita, Sg ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; PHOTOLUMINESCENCE; PHOTONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZIRCONIA;

GALLIUM NITRIDE; NONRADIATIVE RECOMBINATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221413     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<579::AID-PSSA579>3.0.CO;2-N     Document Type: Article

References (5)

1. K. IWATA, H. ASAHI, K. ASAMI, R. KUROIWA, and S. GONDA, Jpn. J. Appl. Phys. 36, L661 (1997).
2. N. MURATA, H. TOCHISHITA, Y. SHIMIZU, T. ARAKI, and Y. NANISHI, Jpn. J. Appl. Phys. 37, L1214 (1998).
3. D. C. PARK, H. C. KO, SZ. FUJITA, and SG. FUJITA, Jpn. J. Appl. Phys. 37, L294 (1998).
4. H. TOCHISHITA, N. MURATA, A. YABE, Y. SIMIZU, Y. NANISHI, and M. KADOTA, 2nd Internat. Symp. Blue Laser & Light Emitting Diodes, Chiba (Japan) 1998 (p. 174).
5. K. IWATA, H. ASAHI, K. ASAMI, A. ISHIDA, R. KUROIWA, H. TAMPO, S. GONDA, and S. CHICHIBU, J. Cryst. Growth 189/190, 218 (1998).