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Volumn 149, Issue 7, 2002, Pages

Reliability characteristics of W/WN/TaOxNy/SiO2/Si metal oxide semiconductor capacitors

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PERMITTIVITY; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SILICA; SPUTTERING; SURFACE ROUGHNESS; TANTALUM COMPOUNDS; TUNGSTEN COMPOUNDS;

EID: 0036641195     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1481532     Document Type: Article
Times cited : (8)

References (21)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.