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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2819-2822

Reliability of thin gate oxides irradiated under X-ray lithography conditions

(6) Cho, Byung Jin a Kim, Sun Jung a Ang, Chew Hoe a Ling, Chung Ho a Joo, Moon Sig b Yeo, In Seok b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b Hynix Semiconductor Inc (South Korea)

Author keywords

Quasi breakdown; Radiation induced leakage current (RILC); Stress induced leakage current (SILC); Ultra thin gate oxide; X ray lithography

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); IRRADIATION; LEAKAGE CURRENTS; OXIDES; SILICON WAFERS; THERMAL EFFECTS;

RADIATION-INDUCED LEAKAGE CURRENT (RLIC); STRESS-INDUCED LEAKAGE CURRENT (SLIC); ULTRA-THIN GATE OXIDES;

X RAY LITHOGRAPHY;

EID: 0035300714 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2819 Document Type: Article

Times cited : (2)

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