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Volumn 86, Issue 12, 1999, Pages 7183-7185
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Investigation of nanoscale Ge segregation in p-channel SiGe/Si field effect transistor structures by electron energy loss imaging
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000854450
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.371810 Document Type: Article |
Times cited : (19)
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References (20)
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