Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images

Journal of Applied Physics

Volumn 90, Issue 6, 2001, Pages 2725-2729

  Liao, X Z ^a,d   Zou, J ^a   Cockayne, D J H ^b   Jiang, Z M ^c   Wang, X ^c  

^a UNIVERSITY OF SYDNEY   (Australia)

^b UNIVERSITY OF OXFORD   (United Kingdom)

^c FUDAN UNIVERSITY   (China)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035883957     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1394900     Document Type: Article

References (22)

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18. image features of Ge(Si)/Si(001) coherent islands are sensitive to the specimen thickness with a thickness period of about 40 nm (corresponding to the effective extinction distance of the [000]* beam at 300 keV). Image features shown in Fig. 1 can only be observed at some specific thicknesses [say, ∼40+40N (nm) with N = 0,1,2,...] and image simulations show that the image features remain the same for these specific thicknesses. Details on the relationship between image features and imaging conditions are not within the frame of this article and will be discussed elsewhere. In this article, we select a thickness that gives the double-cross image features matching those shown in Fig. 1.
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