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Volumn 70, Issue 4, 1997, Pages 493-495

Atomic force microscopy study of self-organized Ge islands grown on Si(100) by low pressure chemical vapor deposition

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[No Author keywords available]

Indexed keywords


EID: 0000625970     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118191     Document Type: Article
Times cited : (78)

References (18)
  • 9
    • 85033322583 scopus 로고    scopus 로고
    • note
    • The tip sidewall angle of 80° ensures that convolution problems could be important only for structures having growing angles θ≥70°.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.