Influence of dislocations on vertical ordering of Ge islands in Si/Ge multilayers grown by low pressure chemical vapour deposition

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages

  Capellini, G ^a   Di Gaspare, L ^a   Evangelisti, F ^a   Palange, E ^b   Notargiacomo, A ^b   Spinella, C ^c   Lombardo, S ^c  

^a ROMA TRE UNIVERSITY   (Italy)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

^c CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); FILM GROWTH; MULTILAYERS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

STRAIN RELAXATION;

SEMICONDUCTING FILMS;

EID: 0032640101     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/101     Document Type: Article

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