The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions

Solid-State Electronics

Volumn 46, Issue 6, 2002, Pages 827-835

  Danielsson, E ^a   Zetterling, C M ^a   Ostling M ^a   Linthicum, K ^b   Thomson, D B ^b   Nam, O H ^b   Davis, R F ^b  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

^b North Carolina State University   (United States)

Author keywords

Band offset; GaN SiC heterojunction; Midgap theory

Indexed keywords

CHARGE CARRIERS; FILM GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SILICON CARBIDE;

BAND OFFSETS;

HETEROJUNCTIONS;

EID: 0036604810     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00346-X     Document Type: Article

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