Comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Vacas, J ^a,c   Lahreche H ^b   Monteiro, T ^c   Caspar, C ^c   Pereira, E ^c   Brylinski, C ^a   Di Forte Poisson, M A ^a  

^a THALES   (France)

^b CRHEA CNRS   (France)

^c UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC BREAKDOWN OF SOLIDS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTOR DIODES; SILICON CARBIDE;

HOMOJUNCTION DIODES;

NITRIDES;

EID: 0343878042     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (9)

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