Current voltage characteristics of high-voltage 4H silicon carbide diodes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Zimmermann, Uwe ^a   Hallén, Anders ^a   Breitholtz, Bo ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b ABB CORPORATE RESEARCH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE MEASUREMENT; ELECTROLUMINESCENCE; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MODELS; SILICON CARBIDE; SUBSTRATES;

HIGH-VOLTAGE SILICON CARBIDE DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0342572430     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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