Morphology control for growth of thick epitaxial 4H SiC layers

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Zhang, J ^a   Ellison, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SURFACE ROUGHNESS; THERMAL EFFECTS;

CHIMNEY REACTORS; STEP BUNCHING;

SEMICONDUCTING FILMS;

EID: 12944330033     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. J. A. Powell and D. J. Larkin, phys. stat. sol. (b) 202 (1997), p. 529
2. C. Hallin, F. Owman, P. Mårtensson, A. Ellison, A. Konstantinov, O. Kordina and E. Janzén, J. Cryst. Growth 181 (1997), p. 241
3. O. Kordina, K. Irvine, J. Sumakeris, H. S. Kong, M. J. Paisley and C. H. Carter, Jr., Materials Science Forum 264-268 (1998), p. 107
4. A. Ellison, Doctoral thesis: Silicon Carbide Growth by high temperature CVD techniques, Dissertation No. 599, Linköping University, Sweden (1999)
5. T. Kimoto, Doctoral thesis: Step-Controlled Epitaxial Growth of α-SiC and Device Applications, Kyoto University, Japan (1995)
6. E. Pearson, T. Takai, T. Halicioglu and W. A. Tiller, J. Cryst. Growth 70 (1984), p. 33