Schottky barrier characteristics of 3C-SiC epilayers grown by low pressure chemical vapor deposition

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Ishida, Y ^a   Takahashi, T ^a   Okumura, H ^a   Sekigawa, T ^a   Yoshida, S ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; VOLTAGE MEASUREMENT;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

SILICON CARBIDE;

EID: 0033722023     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)

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