Structural investigation on the nature of surface defects present in silicon carbide wafers containing varying amount of micropipes

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Shamsuzzoha, M ^a   Saddow, S E ^b   Schattner, T E ^b   Jin, Li ^c   Dudley, M ^c   Rendakova, S V ^d   Dmitriev, V A ^d  

^a University of Alabama   (United States)

^b MISSISSIPPI STATE UNIVERSITY   (United States)

^c Stony Brook University   (United States)

^d TDI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; INTERFACES (MATERIALS); LIQUID PHASE EPITAXY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

MICROPIPE DEFECTS; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHY (SWBXT);

SILICON CARBIDE;

EID: 0033704292     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. J. A. Lely, Berichte der Deutschen Keramischen Gesellschaft, 32, 229-31.
2. M. Dudley, W. Si, S. Wang, C.H. Carter, Jr., R. Glass, V.F. Tsvetkov, II Nuovo Cimento, 19D (1997).
3. S. Rendakova and V. Dimitriev, Abstracts Fall 1997 MRS meeting, Dec. 1-5, 1997, Boston, pp.149-150.
4. S.V. Rendakova, I. P. Nikitina. A. S. Tregubova, and V. A. Dmitriev, J. Electr. Materials, 27 (1998), 292.
5. S. Rendakova, V. Ivantsov, and V. Dimitriev, Materials Science Forum, 264-268(1998), pp. 163-165.