He plus remote plasma nitridation of ultrathin gate oxide for deep submicron CMOS technology applications

Electronics Letters

Volumn 37, Issue 12, 2001, Pages 788-790

  Ting, S F ^a   Fang, Y K ^a   Chen, C H ^a   Yang, C W ^a   Yu, M C ^a   Jang, S M ^a   Yu, C H ^a   Liang, M S ^a   Chen, S ^a   Shih, R ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; GATES (TRANSISTOR); HELIUM; PLASMA APPLICATIONS; ULTRATHIN FILMS;

REMOTE PLASMA NITRIDATION (RPN);

CMOS INTEGRATED CIRCUITS;

EID: 0035821981     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010515     Document Type: Article

References (5)

1. A 1.2 V,0.1 μm gate length CMOS technology: Design and process issues
2. A 1.2 V, sub-0.09 μm gate length CMOS technology
3. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD
4. Ultrathin nitrogen-profile engineered gate dielectric films
5. Assessment of charge-induced damage to ultra-thin gate MOSFETs