Study of SILC and interface trap generation due to high field stressing and its operating temperature dependence in 2.2 nm gate dielectrics

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 699-701

  Borse, D G ^a   Vaidya, S J ^a   Chandorkar, Arun N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Oxynitrides; SILC; Temperature dependence of interface trap generation; Ultra thin oxides

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; HIGH TEMPERATURE EFFECTS; NITROGEN OXIDES; THERMAL STRESS;

INTERFACE TRAP GENERATION; ULTRA-THIN OXIDES;

MOS CAPACITORS;

EID: 0036538952     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992883     Document Type: Article

References (19)

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