Turn-around effects during dynamic operation in 0.25 μm CMOS technology from low to high temperature

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 163-166

  Bravaix, A ^a   Goguenheim, D ^a   Revil, N ^b   Vincent, E ^b  

^a Maison des Technologies   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC DISCHARGES; ELECTRON TRAPS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; HOT CARRIERS; INTERFACES (MATERIALS); LOW TEMPERATURE EFFECTS; MOSFET DEVICES; OSCILLATORS (ELECTRONIC);

TURN-AROUND EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0033190127     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00362-7     Document Type: Article

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