A study of interface trap generation by fowler-nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1705-1710

  Shiue, Jao Hsian ^a   Lee, Joseph Ya Min ^a   Chao, Tien Sheng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Hot carrier; Interface traps; MOS devices; Stress measurement

Indexed keywords

ELECTRON TRAPS; GATES (TRANSISTOR); HOLE TRAPS; HOT CARRIERS; IMPACT IONIZATION; NITROGEN COMPOUNDS; OXIDES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

FOWLER-NORDHEIM STRESS; INTERFACE TRAP DENSITY; INTERFACE TRAPS; STRESS GENERATED INTERFACE TRAP DENSITY;

MOSFET DEVICES;

EID: 0033169518     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777160     Document Type: Article

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