Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 137-138

  Song, S C ^a   Luan, H F ^a   Lee, C H ^a   Mao, A Y ^a   Lee, S J ^a   Gelpey, J ^a   Marcus, S ^a   Kwong, D L ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HYSTERESIS; INTERFACES (MATERIALS); ION IMPLANTATION; LEAKAGE CURRENTS; NITRIDES; NITROGEN OXIDES; OXIDATION; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

BORON DIFFUSION BARRIER PROPERTIES; CAPACITANCE VOLTAGE CURVES; NITRIDATION; RAPID THERMAL OXIDATION; STRESS INDUCED LEAKAGE CURRENT;

ULTRATHIN FILMS;

EID: 0033280580     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)