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Volumn 73, Issue 13, 1998, Pages 1772-1774
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Improved Mg-doped GaN films grown over a multilayered buffer
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL STRUCTURE;
EMISSION SPECTROSCOPY;
EPITAXIAL GROWTH;
FILM GROWTH;
MAGNESIUM;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MULTILAYERS;
PHOTOLUMINESCENCE;
SAPPHIRE;
SEMICONDUCTOR DOPING;
MULTILAYERED BUFFER;
PHOTOLUMINESCENCE SPECTROSCOPY;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0032575781
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.122277 Document Type: Article |
Times cited : (17)
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References (10)
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