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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 7, 1998, Pages 3882-3888

Characterization of double-buffer layers and its application for the metalorganic vapor phase epitaxial growth of GaN

(4) Uchida, Kenji a Nishida, Ken b Kondo, Masataka b Munekata, Hiroo b

a HITACHI LTD (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Buffer layer; Double buffer layers; GaN; Metalorganic vapor phase epitaxy; Residual strain

Indexed keywords

EPITAXIAL GROWTH; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BUFFER LAYER;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 0032117928 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.3882 Document Type: Article

Times cited : (8)

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