SCOPUS 정보 검색 플랫폼

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 241-247

Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs

(11) Chou, Yeong Chang a Leung, D a Lai, R a Grundbacher, R a Eng, D a Scarpulla, J a Barsky, M a Liu, P H a Biedenbender, M a Oki, A a Streit, D a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); DEGRADATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NATURAL FREQUENCIES; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

PSEDOMORPHIC DEVICES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036085284 PISSN: 00999512 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (20)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.