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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 618-621

High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICS on 3-inch InP substrates

(9) Chou, Y C a Leung, D a Scarpulla, J a Lai, R a Barsky, M a Grundbacher, R a Nishimoto, M a Liu, P H a Streit, D C a

a NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); FABRICATION; HIGH ELECTRON MOBILITY TRANSISTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRESS ANALYSIS; SUBSTRATES;

MEDIAN TIME TO FAILURE (MTF);

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0034840736 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (10)

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15
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16
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.