High reliability of 0.1 μm MMIC amplifiers on both AlGaAs/InGaAs/GaAs and InGaAs/InAlAs/InP HEMTs

Asia-Pacific Microwave Conference Proceedings, APMC

Volumn 1, Issue , 2001, Pages 29-32

  Chou, Y C ^a   Leung, D ^a   Lai, R ^a   Grundbacher, R ^a   Scarpulla, J ^a   Barsky, M ^a   Eng, D ^a   Liu, P H ^a   Biedenbender, M ^a   Oki, A ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; FAILURE ANALYSIS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR JUNCTIONS; TEMPERATURE;

CONSTANT CURRENT STRESS; MEDIAN TIME TO FAILURE;

MICROWAVE AMPLIFIERS;

EID: 0035729109     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)