High reliability of 0.1 μm InGaAs/InAlAs/InP HEMT MMICS on 3-inch InP production process

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 174-177

  Chou, Y C ^a   Leung, D ^a   Lai, R ^a   Scarpulla, J ^a   Barsky, M ^a   Grundbacher, R ^a   Eng, D ^a   Liu, P H ^a   Oki, A ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE AMPLIFIERS; RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

SMALL-SIGNAL MICROWAVE CHARACTERISTICS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0035173380     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (20)