High reliability non-hermetic 0.15 μm GaAs pseudomorphic HEMT MMIC amplifiers

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 1999, Pages 153-156

  Leung, D L ^a   Chou, Y C ^a   Wu, C S ^a   Kono, R ^a   Scarpulla, J ^a   Lai, R ^a   Hoppe, M ^a   Streit, D C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FAILURE CRITERIA; FAILURE TIME; HALL MOBILITY; MEDIAN TIME TO FAILURE; NON HERMETIC KA-BAND APPLICATIONS;

ELECTRIC FIELD EFFECTS; FAILURE ANALYSIS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE OPERATIONS; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE;

AMPLIFIERS (ELECTRONIC);

EID: 0032638313     PISSN: 10972633     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.1998.682069     Document Type: Conference Paper

References (9)