190 GHz InP HEMT MMIC LNA with dry etched backside vias

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1999, Pages 423-425

  Barsky, M ^a   Lai, R ^a   Kok, Y L ^a   Sholley, M ^a   Streit, D C ^a   Block, T ^a   Liu, P H ^a   Sabin, E ^a   Rogers, H ^a   Medvedev, V ^a   Gaier, T ^a   Samoska, L ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; DRY ETCHING; GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTANCE MEASUREMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE;

LOW NOISE AMPLIFIERS (LNA);

POWER AMPLIFIERS;

EID: 0032637356     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)