High efficiency 0.15 μm 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 225-227

  Lai, R ^a   Nishimoto, M ^a   Hwang, Y ^a   Biedenbender, M ^a   Kasody, B ^a   Geiger, C ^a   Chen, Y C ^a   Zell, G ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON DEVICE MANUFACTURE; FREQUENCIES; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; POWER AMPLIFIERS; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

POWER ADDED EFFICIENCY; SOLID STATE AMPLIFIER;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0030417541     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)