AlGaN/GaN dual-gate modulation-doped field-effect transistors

Electronics Letters

Volumn 35, Issue 11, 1999, Pages 933-935

  Chen, C H ^a   Krishnamurthy, K ^a   Keller, S ^a   Parish, G ^a   Rodwell, M ^a   Mishra, U K ^a   Wu, Y F ^b  

^a University of California   (United States)

^b WiTech   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET);

FIELD EFFECT TRANSISTORS;

EID: 0032657058     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990627     Document Type: Article

References (6)

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3. SHEPPARD, S.T., DOVERSPIKE, K., PRIBBLE, W.L., ALLEN, S.T., and PALMOUR, J.W.: 'High power microwave GaN/AlGaN HEMTs on silicon carbide'. 56th Device Research Conf. Dig., 1998
4. CHU, K.K., CHUMBES, E.M., GREEN, B.M., SHEALY, J.R., and EASTMAN, L.F.: Unpublished, 1998
5. JOHNSON, E.O.: 'Physical limitations on frequency and power parameters of transistors', RCA Rev., 1965, pp. 163-177
6. ASAI, S., MURAI, F., and KODERA, H.: 'GaAs dual-gate Schottky-barrier FET's for microwave frequencies', IEEE Trans., 1975, ED22, (10), pp. 897-904