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Volumn 44, Issue 12 PART 2, 1996, Pages 2718-2723

Pulsed device measurements and applications

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING EFFECTS; PULSED MEASUREMENT SYSTEMS;

EID: 0030415379     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.554657     Document Type: Article
Times cited : (62)

References (26)
  • 1
    • 0023364944 scopus 로고
    • Narrow pulse measurement of drain characteristics of GaAs MESEET's
    • T. M. Barton, C. M. Snowden, J. R. Richardson, and P. H. Ladbrooke, Narrow pulse measurement of drain characteristics of GaAs MESEET's, Electron. Lett, vol. 23, pp. 686-687, 1987.
    • (1987) Electron. Lett , vol.23 , pp. 686-687
    • Barton, T.M.1    Snowden, C.M.2    Richardson, J.R.3    Ladbrooke, P.H.4
  • 2
    • 0024171867 scopus 로고    scopus 로고
    • Nonlinear GaAs MESFET modeling using pulsed gate measurements
    • Dec. 1988.
    • M. Paggi, P. H. Williams, and Jose M. Borrego, Nonlinear GaAs MESFET modeling using pulsed gate measurements, IEEE Trans. Microwave Theory Tech., vol. 36, no. 36, pp. 1593-1597, Dec. 1988.
    • IEEE Trans. Microwave Theory Tech. , vol.36 , Issue.3 , pp. 1593-1597
    • Paggi, M.1    Williams, P.H.2    Borrego, J.M.3
  • 7
    • 33747316422 scopus 로고    scopus 로고
    • A pulsed S-parameters measurement setup for the non-linear characterization of FET's and bipolar power transistors, in
    • J. P. Teyssier, M. Campoveccio, C. Sommet, J. Portilla, and R. Quere, A pulsed S-parameters measurement setup for the non-linear characterization of FET's and bipolar power transistors, in Eur. Microwave Conf., Madrid, Spain, 1993, pp. 48993.
    • Eur. Microwave Conf., Madrid, Spain , vol.1993 , pp. 48993
    • Teyssier, J.P.1    Campoveccio, M.2    Sommet, C.3    Portilla, J.4    Quere, R.5
  • 13
    • 66649097724 scopus 로고
    • Characterization and modeling of temperature and dispersion effects in power MESFET's, in
    • A. Jastrzebski, Characterization and modeling of temperature and dispersion effects in power MESFET's, in Proc. 24th Eur. Microwave Conf., Cannes, France, Sept. 5-8, .1994, pp. 1319-1324.
    • (1994) Proc. 24th Eur. Microwave Conf., Cannes, France, Sept. 5-8 , pp. 1319-1324
    • Jastrzebski, A.1
  • 14
    • 0029378081 scopus 로고    scopus 로고
    • Method to determine correct timing for pulsed//V measurement of GaAs FET's
    • Sept. 14, 1995.
    • A. Parker and J. Scott, Method to determine correct timing for pulsed//V measurement of GaAs FET's, Electron. Lett., vol. 31, no. 19, pp. 1697-1698, Sept. 14, 1995.
    • Electron. Lett. , vol.31 , Issue.19 , pp. 1697-1698
    • Parker, A.1    Scott, J.2
  • 16
    • 0030108260 scopus 로고    scopus 로고
    • Control of circuit distortion by the derivative superposition method
    • D. R. Webster, J. B. Scott, andD. G. Haigh, Control of circuit distortion by the derivative superposition method, Microwave Guided Wave Lett., vol. 6, no. 3, Mar. 1996.
    • (1996) Microwave Guided Wave Lett. , vol.6 , Issue.3
    • Webster, D.R.1    Scott, J.B.2    Haigh, A.G.3
  • 20
    • 0017621247 scopus 로고
    • A differential technique for the Fourier transform processing of multicomponent exponential functions
    • July
    • D. N. Swingler, A differential technique for the Fourier transform processing of multicomponent exponential functions, IEEE Trans. Biomed. Eng., vol. BME-24, no. 4, pp. 408-410, July 1977.
    • (1977) IEEE Trans. Biomed. Eng., Vol. BME , vol.24 , Issue.4 , pp. 408-410
    • Swingler, D.N.1
  • 22
    • 0028480217 scopus 로고
    • Implementing SPICE models with high-order continuity and rate dependence
    • Aug.
    • A. E. Parker, Implementing SPICE models with high-order continuity and rate dependence, IEE Proc. Circ., Dev. Syst., vol. 141, no. 4, pp. 251-257, Aug. 1994.
    • (1994) IEE Proc. Circ., Dev. Syst. , vol.141 , Issue.4 , pp. 251-257
    • Parker, A.E.1
  • 23
    • 0003014485 scopus 로고
    • Modeling GaAs MESFET's for intermodulation analysis
    • May
    • S. A. Maas and D. Neilson, Modeling GaAs MESFET's for intermodulation analysis, Microwave J., pp. 295-298, May 1991.
    • (1991) Microwave J. , pp. 295-298
    • Maas, S.A.1    Neilson, D.2
  • 24
    • 0027681674 scopus 로고
    • Intermodulation nulling in GaAs MESFET's
    • Oct. 28
    • A. Parker and J. Scott, Intermodulation nulling in GaAs MESFET's, Electron. Lett., vol. 29, no. 22, Oct. 28, 1993.
    • (1993) Electron. Lett. , vol.29 , Issue.22
    • Parker, A.1    Scott, J.2
  • 25
    • 0029515217 scopus 로고    scopus 로고
    • Gradual degradation under RF overdrive of MESFET's and PHEMT's, in
    • J. C. M. Hwang, Gradual degradation under RF overdrive of MESFET's and PHEMT's, in GaAs 1C Symp., San Diego, CA, Oct. 1995, pp. 81-84.
    • GaAs 1C Symp., San Diego, CA, Oct. 1995 , pp. 81-84
    • Hwang, J.C.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.