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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1626-1639

Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy

(9) Brandt, O a Waltereit, P a Dhar, S a Jahn, U a Sun, Y J a Trampert, A a Ploog, K H a Tagliente, M A b Tapfer, L b

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

b Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION EFFECTS; ELECTRIC FIELD EFFECTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM COMPOUNDS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

INDIUM NITRIDE; METAL STABLE GROWTH; PLASMA ASSISTED MOLECULAR BEAM EPITAXY; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035982597 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1491540 Document Type: Conference Paper

Times cited : (14)

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