Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 1, 1996, Pages 31-33

  Bertru, N ^a   Brandt, O ^a   Wassermeier, M ^a   Ploog, K ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DESORPTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; THERMAL EFFECTS; THICKNESS MEASUREMENT; THREE DIMENSIONAL;

CRITICAL THICKNESS; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; LATTICE MISMATCH; MOLE FRACTION; SEGREGATION ENERGY; STRANSKY-KRASTANOV GROWTH SCHEME; TWO DIMENSIONAL;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029777044     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116746     Document Type: Article

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