Lateral size of atomically flat oxidized region on Si(111) surface

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 127-130

  Omura, Akio ^a   Sekikawa, Hiroaki ^a   Hattori, Takeo ^a  

^a TOKYO CITY UNIVERSITY   (Japan)

Author keywords

Interface structure; Layer by layer oxidation; Oxidation reaction; SiO 2 Si; Terrace width

Indexed keywords

CRYSTAL ORIENTATION; INTERFACES (MATERIALS); OXIDATION; SILICA; SURFACE STRUCTURE;

MOLECULAR LAYERS;

SEMICONDUCTING SILICON;

EID: 0031548245     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80065-7     Document Type: Article

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