Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structures

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 12, 2001, Pages

  Demkov, Alexander A ^a   Zhang, Xiaodong ^b   Drabold, D A ^b  

^a MOTOROLA INC   (United States)

^b OHIO UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE;

ARTICLE; CALCULATION; CHEMICAL STRUCTURE; MOLECULAR DYNAMICS; PHYSICAL CHEMISTRY; SEMICONDUCTOR; THEORY;

EID: 0035883553     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.125306     Document Type: Article

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