Theoretical and experimental investigation of ultrathin oxynitrides and the role of nitrogen at the Si-SiO2 interface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 5, 2000, Pages 2388-2394

  Demkov, A A ^a   Liu, R ^a   Zhang, Xiaodong ^b   Loechelt, Heather ^c  

^a MOTOROLA INC   (United States)

^b OHIO UNIVERSITY   (United States)

^c ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATTENUATION; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; MOLECULAR STRUCTURE; MOLECULAR VIBRATIONS; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

ATTENUATED TOTAL REFLECTION (ATR) INFRARED SPECTROSCOPY; ULTRATHIN OXYNITRIDES;

SEMICONDUCTING FILMS;

EID: 0034268709     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1288946     Document Type: Article

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