Tunneling characteristics of nonuniform ultrathin oxides

Applied Physics Letters

Volumn 73, Issue 19, 1998, Pages 2769-2771

  Ting, D Z Y ^a,b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001367934     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122585     Document Type: Article

References (8)

1. S. T. Cundiff, W. H. Knox, F. H. Baumann, K. W. Evans-Lutterodt, M.-T. Tang, M. L. Green, and H. M. van Driel, Appl. Phys. Lett. 70, 1414 (1997).
2. D. Z.-Y. Ting, S. K. Kirby, and T. C. McGill, J. Vac. Sci. Technol. B 11, 1738 (1993).
3. R. Tsu and L Esaki, Appl. Phys. Lett. 22, 562 (1973).
4. 2 effective mass is taken to be in the range of values reported in the literature. The calculated current densities are not highly sensitive to the poly-Si and Si effective masses.
5. F. Rana, S. Tiwari, and D. A. Buchanan, Appl. Phys. Lett. 69, 1104 (1996).
6. J. L. Alay and M. Hirose, J. Appl. Phys. 81, 1606 (1997).
7. e,∥) states.
8. Our calculation includes multiple scattering effects. Therefore, this definition has left out some higher order contributions of states having undergone multiple scattering and ending up in the same direction as the incident plane wave.