Bias and W/L dependence of capacitive coupling coefficients in floating gate memory cells

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 2081-2089

  Larcher, Luca ^a,b   Pavan, Paolo ^a,b   Albani, Lara ^c   Ghilardi, Tecla ^c  

^a IEEE   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Flash memory; Semiconductor device modeling; Semiconductor device simulation

Indexed keywords

CAPACITIVE COUPLING COEFFICIENT; FLOATING GATE MEMORY CELL; SEMICONDUCTOR DEVICE SIMULATION;

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC POTENTIAL; EQUIVALENT CIRCUITS; NUMERICAL ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

FLASH MEMORY;

EID: 0035445244     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944199     Document Type: Article

References (17)

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