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Materials Science and Engineering B

Volumn 40, Issue 2-3, 1996, Pages 101-118

High ion density dry etching of compound semiconductors

(1) Pearton, S J a

a University of Florida (United States)

Author keywords

Compound semiconductors; Dry etching; Electron cyclotron resonance

Indexed keywords

ASPECT RATIO; DRY ETCHING; ELECTRODES; ELECTRON CYCLOTRON RESONANCE; PLASMA SOURCES; REACTION KINETICS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SPUTTERING; SUBSTRATES;

COMPOUND SEMICONDUCTORS; DESORPTION KINETICS; HIGH ION DENSITIES;

SEMICONDUCTING FILMS;

EID: 0001294856 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/0921-5107(96)01659-5 Document Type: Review

Times cited : (36)

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